Abstract
This paper presents the developments of high-performance integrated cryogenic power modules, where both driver components and power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are integrated in a single package, to be used in cryogenic inverter operating at liquid nitrogen temperature. Compact high-voltage, cryogenic integrated power modules with single power MOSFET that exhibited more than 14x improvement in on-resistance and continuous current-carrying capability exceeding 40 A. A multipower MOSFETs integrated cryogenic power module is also developed in order to further increase the power density and reduce the size and weight of the cryogenic power system. Two different approaches taken in the developments of these modules are reported in this paper.
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