Development of crack free BLT thick films by chemical solution deposition technique

Abstract

Crack free (Bi3.25La0.75Ti3O12) BLT film of ~1μm thickness was deposited on Pt/Si(100) wafer by sol–gel methodology using a polymeric additive: polyvinyl pyrrolidone. The remnant polarization and coercive field values measured from the P–E hysteresis loops for BLT films annealed at 650°C and 700°C were 10μC/cm2, 110kV/cm and 11.5μC/cm2, 111.5kV/cm, respectively. The leakage current in the BLT film was remarkably low up to an electric field of 150kV/cm for which the measured leakage current density was 2.5×10−6A/cm2. The leakage current behavior showed Ohmic conduction in the low-field region and was dominated by space charge in the high-field region.