Development of compact synchrotron light source for x-ray lithography (abstract)

Abstract

Ishikawajima-Harima Heavy Industries Co., Ltd., (IHI) has developed a prototype compact synchrotron light source for x-ray lithography of semiconductors. It consists of 45-MeV linear accelerator as an electron injector and an 800-MeV synchrotron. Peak wavelength of synchrotron radiation is around 10 Å. The basic parameter of the synchrotron is as follows: (1) Beam current: more than 50 mA; (2) Beam life: more than 1 hr; (3) Circumference: 23.5 m; (4) Bending magnet: 1.33 T, 90° sector laminated core; (5) rf system: 178.5 MHz tetrode power supply. Our synchrotron is a so-called low-energy injection accelerator and various difficult problems such as ion trapping, vacuum, Touscheck effect will occur. So, we provide ion cleaning electrodes inside the vacuum chamber to avoid ion trapping. Also, we have adopted a trapezoidal magnet excitation method as an injection scheme to stimulate gas desorption of the vacuum chamber. The beamline extracted from the bending magnet will be used for various research subjects which include x-ray lithography, photoelectron spectroscopy, EXAFS, fluorescence analysis, and so on. This machine will be completed by the end of 1988 and is scheduled to use synchrotron radiation in the spring of 1989.