Abstract
A process for the monolithic integration of micromechanical structures into a 3- mu m standard CMOS process has been developed. Anisotropic wet etching of silicon using the p/sup +/-etchstop technique on high boron doped epitaxial layers as well as the electrochemical etchstop technique at pn-junctions was combined with the IC process. Piezoresistive accelerometers with a monolithically integrated operational amplifier were fabricated. Measurements on the devices produced with the p/sup +/-etchstop technique showed mechanical stress problems and shifts in the electronic device parameters. In contrast, no influence on mechanical and electronic properties of the devices fabricated with the pn-junction etchstop technique was found. Smart accelerometers with electronic device parameters comparable to the standard CMOS process were successfully realized. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
