Abstract
In extreme-ultraviolet (EUV) lithography, defect-free mask production is one of the critical issues for the high-volume manufacturing of semiconductor devices. We developed a coherent EUV scatterometry microscope (CSM), which is a simple lensless system. The CSM records diffraction from mask patterns with a charge-coupled-device (CCD) camera directly, which is illuminated with a coherent EUV light. Since a practical standalone system is required by the industry, we developed a standalone CSM system employing a high-order harmonic generation (HHG) EUV source. The 59th high-order harmonic generation of 13.5 nm wavelength is pumped by a tabletop, 6 mJ, 32 fs, Ti:sapphire laser system. The EUV output energy of 1 µW is successfully achieved. We performed the observation of an EUV mask using the HHG-CSM system. The detection limit of the line defect size is improved to 2 nm for the high output power of the HHG EUV source.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
