Abstract
A prototype of the 250-μm pitch 8 × 8 silicon photomultiplier (SiPM) array was designed and fabricated by the 0.2 μm 5-metal Silicon on Insulator (SOI)-CMOS technology aiming at the monolithic integration of sensors and front-end electronics. The SOI technology enables the 3D integration of electronics without a mechanical bonding that allows the pixel size refinement, the backside illumination, and the improved electronics performance. The signal of SiPM is processed by the front-end electronics, which consists of a preamplifier, a shaper, and four discriminators. The design modification to sensors and the performance evaluations of the sensors and front-end electronics are reported in this paper.
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