Abstract
An array-type atmospheric-pressure radio-frequency (RF) plasma generator is proposed for high-precision and high-throughput numerically controlled (NC) processes. We propose the use of a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for direct RF switching to achieve plasma on-off control. We confirmed that this type of circuit works correctly using a MOSFET with a small parasitic capacitance between its source and gate. We examined the design method for the distance between adjacent electrodes, which corresponds to the parasitic capacitance between adjacent electrodes and is very important in the individual on-off control of each electrode. We developed a prototype array-type plasma generator apparatus with 19 electrodes and the same number of MOSFET circuits; we then confirmed that each electrode could control its plasma on-off state individually. We also demonstrated that the thickness uniformity of the surface Si layer of a silicon-on-insulator wafer could be processed to less than 1 nm peak to valley by the NC sacrificial oxidation method using the apparatus.
Highlights
According to this method, the spatial resolution of the process depends on the size of the electrode and on the distance between the electrodes and the workpiece
We examined the design method for the distance between adjacent electrodes, which corresponds to the parasitic capacitance between adjacent electrodes and is very important in the individual on–off control of each electrode
We developed a prototype array-type plasma generator apparatus with 19 electrodes and the same number of metaloxide-semiconductor field-effect transistor (MOSFET) circuits; we confirmed that each electrode could control its plasma on–off state individually
Summary
The spatial resolution of the process depends on the size of the electrode and on the distance between the electrodes and the workpiece. We propose a novel array-type atmosphericpressure plasma generator that can control the on–off state of plasma by an electrical switch circuit, which eliminates the need for an insulator plate because the surface of the electrode module is always flat (Fig. 2(b)). Using this method, the spatial resolution of the process is comparable to the electrode size. We describe how to design an array electrode system with an electrical switch, we describe its processing characteristics, and we present a demonstration of the NC process
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