Development of an upgraded E-field strength probe to be used as a transfer standard for metrological proposes

Abstract

This paper describes the development of an E-field strength sensor probe based on schottky diode technology to be used as a transfer standard for metrological proposes. This sensor probe was designed in a joint project between the National Metrology Institutes of Brazil (Inmetro) and China (NIM China) to bring traceability to many facilities generating E-field strength of both Institutes. The developed sensor allows transferring the E-field traceability from a μ-TEM Cell used as a primary standard to secondary standards like TEM and G-TEM Cells in the frequency range of 500 kHz to 2 GHz and at E-field intensities from 3 V/m to 70 V/m, with low uncertainty and a good dynamic range. The working principle of the new measuring system is similar to an old system that is not manufactured anymore, but it was re-designed in order to improve its performance and characteristics obtaining, as a result, a reduction in size of more than 10 times. Stability test results are also presented, showing that the new sensor is suitable for future inter-comparisons.