Abstract
Micro-electro-mechanical system (MEMS) scanning micromirrors are playing an increasingly important role in active structured light systems. However, the initial phase error of the structured light generated by a scanning micromirror seriously affects the accuracy of the corresponding system. This paper reports an optoelectronic integrated sensor with high irradiance responsivity and high linearity that can be used to correct the phase error of the micromirror. The optoelectronic integrated sensor consists of a large-area photodetector (PD) and a receiving circuit, including a post amplifier, an operational amplifier, a bandgap reference, and a reference current circuit. The optoelectronic sensor chip is fabricated in a 180 nm CMOS process. Experimental results show that with a 5 V power supply, the optoelectronic sensor has an irradiance responsivity of 100 mV/(μW/cm2) and a -3 dB bandwidth of 2 kHz. The minimal detectable light power is about 19.4 nW, which satisfies the requirements of many active structured light systems. Through testing, the application of the chip effectively reduces the phase error of the micromirror to 2.5%.
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