Development of an improved Kelvin probe force microscope for accurate local potential measurements on biased electronic devices.

Abstract

An improved setup for accurate near-field surface potential measurements and characterisation of biased electronic devices using the Kelvin Probe method has been developed. Using an external voltage source synchronised with the raster-scan of the KPFM-AM, this setup allows to avoid potential measurement errors of the conventional Kelvin Probe Force Microscopy in the case of in situ measurements on biased electronic devices. This improved KPFM-AM setup has been tested on silicon-based devices and organic semiconductor-based devices such as organic field effect transistors (OFETs), showing differences up to 25% compared to the standard KPFM-AM lift-mode measurement method.