Abstract
An automated ultrasonic spray pyrolysis system is fabricated for the growth of thin films. The system is equipped with x–y movement and enables film deposition in different patterns and spray rates. Cu2(Zn,Sn)S4 (CZTS) films are deposited using this setup. The substrate temperature (Ts) is varied from 240 to 490°C. Kesterite CZTS phase is observed in all the films together with binary phases. The films prepared at Ts<340°C showed SnxSy phase and those at Ts>340°C showed Cu2S phase. Sulfur incorporation is maximum (40%) at 440°C and the films showed better morphology. The Cu and S concentrations are varied to remove binary phases. Depth wise elemental analysis confirmed the existence of single phase CZTS. p-Type CZTS films of resistivity in the range of 102–103Ωcm are obtained.
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