Development of Ag@Si composite sinter joining with ultra-high resistance to thermal shock test for SiC power device: Experiment validation and numerical simulation

Abstract

Owing to its cost-effectiveness and low coefficient of thermal expansion (CTE), micron Si is incorporated into sintered Ag matrix to develop an Ag@Si composite sintering strategy. The Si integration helps reduce cost and alleviate CTE-mismatch of Ag-sintered die attachments. An innovative Ag@Si composite sintering structure is achieved by low-temperature and pressure-less sintering process, where a possibly slight diffusion of native SiO2 on the Si surface toward Ag is indicated by TEM observation, enabling the integration of Ag and Si into one continuous network. Owing to the robust well-bonded composite sintering, the Ag@Si joining strategy provides mechanical/microstructural reliability far beyond the pure Ag sinter joining, demonstrating significant prospects in high-temperature interconnection applications. During the harsh thermal cycling (−50–250 °C), the mitigating effect of the Si addition on CTE mismatch is manifested through the substantial suppression of microstructure deterioration in Ag@Si joint that occurs in pure-Ag-sintered joint, while the shear strength retention rate is doubled. Detailed investigation into the mechanism for elevated performance was conducted by material property and Missies stress analysis. The incorporation of Si helps modify the CTE, elastic properties, and stress distribution of Ag@Si-sintered material, synergistically contributing to the satisfactory joining reliability.