Abstract
The hot carrier solar cell is one of the most promising advanced PV concepts with theoretical efficiency of over 65% at one sun. Two crucial components of the HC solar cell are: (i) Absorber which can sufficiently reduce the rate of hot carrier cooling so that they can be collected at higher energies, and (ii) Energy selective contacts (ESCs) which allow extraction of hot carriers only through a narrow energy range. In this paper, potential of HfN and ZrN thin films as hot carrier absorber has been investigated. Al 2 O 3 /Ge QW/ Al 2 O 3 , Al 2 O 3 /Si QW/Al 2 O 3 , and Al 2 O 3 /PbS QDs/Al 2 O 3 double barrier structures have been investigated as energy selective contacts.
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