Abstract
A 50 to 550MHz wideband gallium nitride (GaN) HEMT power amplifler with over 43dBm output power and 63% drain e-ciency has been successfully developed. The demonstrated wideband power amplifler utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifler's output power and e-ciency. To assure a wideband operation, a coaxial line impedance transformer has been used as part of the input matching network; meanwhile, a wideband a 1:1 ferrite loaded balun and low pass fllters are utilized on the amplifler's output side instead of the conventional serial harmonic termination.
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