Abstract
Herein, vacuum-compatible semiconductor-wafer-immersion-cooling method is proposed as an alternative to helium gas cooling, which becomes challenging to maintain in high-vacuum conditions during semiconductor manufacturing. This method aims to simultaneously maintain a high vacuum and achieve high cooling performance. It involves supplying a low-vapor-pressure ionic liquid (IL), a type of room-temperature molten salt, into the gap between the wafer and the wafer stage, using liquid pressure to float and cool the wafer. The proposed cooling device was prototyped, and experimentally investigated the IL cooling performance. The results showed that, even under high vacuum with order of 10−4 Pa, IL can fully immerse the 80 μm-scale small clearance between wafer and wafer stage and demonstrate high cooling performance for heated wafers. The proposed method has been proven to achieve both high vacuum and high cooling performance. It is expected as an alternative to helium gas cooling in semiconductor manufacturing.
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