Abstract
An ultrahigh vacuum (UHV) compatible hollow cathode arc source has been developed for the deposition of very pure nitride films (especially c-BN films). The crucial compounds of the plasma source have been numerically investigated to find parameters for optimal functioning. Heat conduction as well as radiation problems have been considered in both discharge electrodes, temperature distributions for different cathode materials have been calculated which show a strong dependence of the maximum temperature on the work function of the cathode. In order to deposit pure films a rather small cathode work function should be used. The source has been characterized experimentally with Langmuir probes and mass spectrometry with special regard to the nitrogen ion fluxes which are important for nitride film deposition - He addition to the working gas seemed to be beneficial in increasing the nitrogen ion fluxes. TiNx films could be deposited in the first experiments with a standard parameter set.
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