Abstract
We have developed a method to integrate a low thermal budget silicon dioxide dielectric in ultrahigh vacuum to surface gate an in-plane gated phosphorus donor quantum dot in silicon. By combining in-plane and top-gate action, the resistance of the quantum dot tunnel barriers can be tuned to change the dot from open to closed where clear Coulomb blockade of the electron transport has been observed at 4 K. Additionally the scanning tunneling microscopy patterned in-plane gates can be used to independently tune the electron number on the dot. This enhanced tunability of donor based quantum dots bodes well for the fabrication of single donor architectures.
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