Development of a Practical High-Rate CVD System

Abstract

We have developed a new chemical vapor deposition (CVD) system that is capable of a high growth rate of over 100 µm/h with good uniformities of thickness and carrier concentration. In this CVD system, the process gases contribute efficiently to epitaxial growth. In a demonstration of the abilities of the CVD system, we achieved an average growth rate of 140 µm/h, a thickness uniformity of 3.9%, and a carrier concentration uniformity of 8.9% in a 2-inch wafer, without degradation of the crystallinity.