Abstract
A scintillation technique was applied to directly monitor high-energy secondary electrons during the process of plasma immersion ion implantation (PIII). The spectral peak of the scintillation appeared at the wavelength of nm, and the temporal behaviour of the secondary electrons was measured with a response time as short as several microseconds. A maximum absolute secondary-electron flux for a target peak voltage of 25 kV reached at a measuring point, which showed good agreement with a calculated value. The kinetic energy of the secondary electrons was also measured by penetration depth into an aluminium layer coated on the scintillator surface, revealing acceleration of the secondary electrons up to an energy corresponding to the sheath voltage.
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