Abstract
This paper reports the development of thin film passive elements embedded within the interlayer of a silicon interposer. Thin film resistors were developed using a seed layer formed by the sputter semi-additive method. Inductor coils were designed as spiral coils, using Benzocyclobutene as the dielectric interlayer, and thin film metal-insulator-metal capacitors were formed using an anodizing tantalum oxide thin film as the dielectric layer and tantalum conductor films as capacitor electrodes. In this study, the fabrication process and the high-frequency properties of these passive elements are investigated.
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