Abstract
We have developed a planar sputtering device that uses a melt-processed bulk superconductor to generate the magnetic field. The magnetic field that confines the plasma above the sputtering target is about 1.0 T, which is about 20 times larger than the field normally used for magnetron sputtering. Because of the large magnetic field, discharge at an Ar gas pressure as low as 10 −3 Pa was possible. In this study, we used the ultra-strong-field sputtering technique for depositing Ga-doped ZnO which is attracting interest as a transparent electrode material. We also studied the effect of employing an auxiliary coil to tailor the magnetic field distribution and discuss how the discharge characteristic had changed.
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