Abstract
We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ). The principle of the device is based on the transport of a spin-polarized hot electron current which can be manipulated under an appropriate voltage biasing scheme using three terminals. The first MTJ is used as an emitter of hot electrons into the base. The second MTJ and the base play the role of a spin-dependent filter. Transport measurements have been carried out, showing the creation of hot electrons and a collected magnetocurrent (MC) signal.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
