Abstract
A high-efficiency front junction n-type passivated emitter and a rear total diffusion (n-type PERT) solar cell with the front boron diffusion passivated by a Al2O3/SiNx stack layer deposited by plasma enhanced chemical vapor method and the rear with phosphorus total diffusion and Al evaporated local contact are presented in this paper. The main purpose of this study was to develop industrially feasible front junction n-type PERT solar cells with high-efficiency; these were realized on a large area of n-type industrial 5- and 6-in. wafers. An average of 21.85% cell efficiency was achieved on 5-in. wafers, and the highest cell convert efficiency of 21.98% was achieved with Voc of 683.8mV, Jsc of 40.13mA/cm2, and FF of 80.11%. For 6-in. cells, we get Fraunhofer independently confirmed efficiency of 21.49% with a Voc of 674.1mV, a Jsc of 39.77mA/cm2, a FF of 80.18%. Details of cell fabrication and results are presented, followed by a best cell power loss analysis on Voc, Isc and FF.
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