Abstract

An image sensor consisting of an active-matrix high-efficiency electron emission device (HEED) array and a high-gain avalanche rushing amorphous photoconductor (HARP) has been fabricated. Based on the demonstration that a prototyped 256×192pixel image sensor can pick up a high definition image with an ultrahigh sensitivity under poor light condition, the authors have been developing a 640×480pixel active-matrix HEED toward a practical use. The emission current density has been enhanced more than twice compared to that of previous one and has increased up to 1A∕cm2. The active-matrix HEED array combined with HARP is available for application to practical image sensing with an ultrahigh sensitivity and high definition.

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