Abstract
A novel TOF-SIMS apparatus was designed and constructed aiming at single small particle analysis. The apparatus consisted of high lateral resolution TOF-SIMS part and SEM function for seeking analytical target. A pulsed Ga-focused ion beam (FIB) was also newly developed for this purpose based on state-of-the art ion optics. Secondary ion yield of Al was 1.8 × 10 −2 which is high enough small area analysis, and mass resolution was also acceptable for element analysis. The most prominent feature, lateral resolution, was demonstrated to be 40 nm in actual mapping of an IC cross-section. As an application aerosol particles were analyzed individually.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
