Development of a high deposition rate machine by ion beam sputtering

Abstract

Recently a deposition method by ion beam sputtering was developed which is interesting for making films with superconductive, optical or magnetic properties. The ion beam sputtering method has many advantages such as process controllability, low working pressure and no plasma contact. However, the deposition rates have not been so high as those of other methods such as magnetron sputtering. The authors have developed a large-capacity and high-efficiency ion source by applying the nuclear fusion ion source technology, and realized a high deposition rate ion beam sputter machine by using this ion source. This machine has a high-speed semiconductor switch for quick interruption and restart. It also maintains a constant deposition rate by controlling the ion beam current according to the rate monitor signal. A deposition rate of 340 nm/min is obtained for a copper film at a substrate 250 mm distant from a target, which is nearly the same level as with magnetron sputtering.