Abstract
We report on an R&D activity aimed at the realisation of silicon microstrip detectors with integrated front-end electronics, to be used in high-energy physics experiments and medical/industrial imaging applications. A dedicated fabrication technology has been developed at ITC-RST (Trento, Italy), which allows for the production of single-sided microstrip detectors, with integrated coupling capacitors and polysilicon resistors, as well as active devices, including N-channel Junction Field Effect Transistors (JFET's), and N- or P-channel MOS transistors. The peculiar characteristics of the fabrication process are outlined, and experimental results from the electrical characterisation of the devices are reported, showing that transistors with good electric figures can be obtained within the proposed technology while preserving the basic detector parameters.
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