Abstract
An explicit and single-piece model for MOSFET's has been developed. The expressions for the dc current and total charges are C/sub /spl infin//-continuous through all regions of normal operation. The correctness and the advantages of the new model are checked by comparing with HSPICE simulations. Good agreement with the dc and charge models implemented in HSPICE has been found. Besides, the small-signal parameters show smoother transitions between the different regions. Therefore, the advantages of the new model for circuit simulation are demonstrated. >
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