Abstract
We have been developing cryogenic readout integrated circuits (ROICs) for sensitive detectors at far-infrared and submillimeter wavelengths: The ROICs are constructed from SONY GaAs-JFETs, which have excellent performance even at less than 1 K. In addition, it is suitable device for ultra low background applications because of the extremely low gate leakage current. In the spring of 2008, we have designed and fabricated 4-ch AC-coupled capacitive transimpedance amplifiers and several basic digital circuits giving multiplex function for 32-element SIS photon detector array. The expected performance of the amplifier is as follows; open loop gain of >2000, power consumption <1.5 μW, and input referred noise ~ 1 μV/√Hz@1Hz. A summary of this 2008's experimental production and initial test results are presented in this paper.
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