Abstract
Based on our previously developed design methodologies which minimized the total free energy and the calculations of the defect/carrier concentrations and the carrier mobility of the non-stoichiometric CuInSe 2, CuGaSe 2, ZnO and ZnO:Al, good confirmation was obtained from our computed conductance of CuInSe 2 with the measured data, in which the total energy calculation was modified by considering the configurational entropy, and solving the coupled total free energy function and the charge neutrality equation self-consistently. In addition, a method to calculate the opto-electrical properties of CuIn x Ga 1− x Se 2 alloy, which is the most popular absorber for high efficiency thin film solar cells, was also effectively developed. Furthermore, the above electrical parameters of the non-stoichiometric window/absorber layers were used to optimize the cell structure, and their performances were correlated with the published experimental results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
