Development of a complex strontium bismuth molybdate material: Microstructural, electrical, and leakage current characteristics for storage and electronic device application

Abstract

In this article, synthesis (solid-state reaction) and characterizations of a complex strontium bismuth molybdate material have been reported. The scanning electron microscopic image suggests the existence of grains of various sizes and shapes that are evenly dispersed, accompanied by small pores. The Maxwell-Wagner dielectric dispersion, relaxation, and transport mechanism have been investigated utilizing dielectric, impedance, and conductivity spectrum within the studied experimental frequency (1 kHz–1 MHz) and temperature (25–500 °C) range. The energy storage efficiency is 56.13 %, calculated by the loop of electric polarization. The results of temperature-dependent resistance suggest that the prepared material can be used for PTC thermistors, sensors, and other related devices. The varistor constants β1 and β2 indicate the presence of non-Ohmic and SCLC conduction mechanisms, which are also suitable for electronic devices.