Abstract
A 6.5 kV IGBT with wide safe operation area (SOA) for the high voltage inverter application is presented. The correlation between turn off energy (E/sub off/) and collector-emitter voltage (V/sub CE/) in PT (punch through)-IGBT is not linear. As Eoff rapidly increases at any V/sub CE/, Eoff becomes larger. A new IGBT makes that correlation linear by a new design concept: light punch through (LPT) concept. Blocking voltage more than rating voltage of 6.5 kV is easily satisfied at Tj=-40/spl sim/125/spl deg/C by the optimization of n-layer thickness (tn-) and resistivity (/spl rho/n-), and LPT concept. Moreover, this new IGBT chip has achieved wide SOA that RBSOA is Jc=140A/cm/sup 2/ at V/sub CE/=4.3kV and Tj=125/spl deg/C and short circuit SOA is t/sub w/=13 /spl mu/s at V/sub CE/=4.3 kV and Tj=125/spl deg/C by optimizing p-well layer.
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