Abstract
We present our latest developments in ultra high voltage 4H-SiC IGBTs. A 6.7 mm x 6.7 mm 4H-SiC N-IGBT with an active area of 0.16 cm2 showed a blocking voltage of 12.5 kV, and demonstrated a room temperature differential specific on-resistance of 5.3 mΩ-cm2 with a gate bias of 20 V. A 4H-SiC P-IGBT exhibited a record high blocking voltage of 15 kV, while showing a differential specific on-resistance of 24 mΩ-cm2. A comparison between P- and N- IGBTs in 4H-SiC is provided in this paper.
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