Abstract
High voltage 4H-SiC Ni Schottky junction barrier schottky (JBS) diode with breakdown voltage of 1000V and forward current of 1A has been fabricated. A low reverse leakage current below 4.7×10-6A/cm2 at the bias voltage of-1000V has been obtained. The forward on-state current was 1A at VF = 2.2V. The chip is 1.3mm×1.3mm. The turn-on voltage is about 1.4V. The on-state resistance is 14.5mΩ·cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a SMB package. The thickness of the N-epilayer is 10μm, and the doping concentration is 4×1015cm3. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using WTi/Au multilayer metal structure, the double side Au process of 4H-SiC JBS diode is formed. We use the PECVD SixNy/SiO2 as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.
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