Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

Abstract

We are developing far-infrared (FIR) imaging sensors for low-background and high-sensitivity applications such as infrared astronomy. Previous FIR monolithic imaging sensors, such as an extrinsic germanium photo-conductor (Ge PC) with a PMOS readout integrated circuit (ROIC) hybridized by indium pixel-to-pixel interconnection, had three difficulties: (1) short cut-off wavelength (120 \(\upmu \)m), (2) large power consumption (10 \(\upmu \)W/pixel), and (3) large mismatch in thermal expansion between the Ge PC and the Si ROIC. In order to overcome these difficulties, we developed (1) a blocked impurity band detector fabricated by a surface- activated bond technology, whose cut-off wavelength is longer than 160 \(\upmu \)m, (2) a fully-depleted silicon-on-insulator CMOS ROIC which works below 4 K with 1 \(\upmu \)W/pixel operating power, and (3) a new concept, Si-supported Ge detector, which shows tolerance to thermal cycling down to 3 K. With these new techniques, we are now developing a \(32 \times 32 \) FIR imaging sensor.