Abstract
Spin-dependent tunneling structures are widely used in many spintronic devices and sensors. This paper describes the magnetic tunnel junction (MTJ) characteristics caused by the inhomogeneous magnetic field of ferromagnetic layers. The extremely oblate magnetic ellipsoids have been used to mimic these layers. The strong effect of an inhomogeneous magnetic field on the magnetoresistive layers’ interaction was demonstrated. The magnetostatic coupling coefficient is also calculated.
Highlights
Spin-tunnel magnetoresistive nanostructures are used in various spintronic devices: in magnetic field sensors [1,2,3,4], in magnetoresistive biosensors [5], and in magnetoresistive memory elements [6,7,8]
We study the model of the magnetic tunnel junction (MTJ) and the process of remagnetization of its state by an external magnetic field
It was found that near the boundaries of the magnetic stripe of the free magnetic layer (FL), the inhomogeneity of the magnetic field, caused by the magnetization of the FixL, reaches a significant value, and the magnetic field at the border increases sharply compared to the central part of the stripe
Summary
Spin-tunnel magnetoresistive nanostructures are used in various spintronic devices: in magnetic field sensors [1,2,3,4], in magnetoresistive biosensors [5], and in magnetoresistive memory elements [6,7,8]. For the stable operation of an MTJ-based bistable element, it is necessary to find its optimal geometric parameters and values of the magnetic field vector at which its state is switched. Research in this direction for various modifications of MTJ has been actively carried out for over 20 years [7,8]. In [9], a theoretical study of the range of magnetic fields in which the direction of the vector M in the FL switches from one stable state to another was carried out. To get rid of this feature, it is enough to reduce the FL in size by about of 10%, the sensitive layer will be located in a more uniform and significantly smaller magnetostatic coupling field
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