Abstract
A halide-activated, cementation pack has been developed to codeposit either silicon and boron or else silicon and germanium in a single processing/reaction step to grow Ti-silicide diffusion coatings on commercially pure (CP) titanium, Ti-22Al-27Nb, and Ti-20Al-22Nb. Since boron is nearly insoluble in TiSi2, a TiB2 layer is localized at the surface of the B-modified silicide coatings. The thickness of the TiB2 layer is controlled by the choice of boron activity and halide activator in the pack. Germanium is soluble in the Ti-silicide layers but inhomogeneously distributed in the Ge-doped silicide coating. The germanium content is controlled by choices of the Si-to-Ge ratio and the halide activator in the pack. The growth kinetics for the five-layered B-modified silicide coatings are generally similar to the undoped silicide coatings. The growth mechanism for the five-layered Ge-doped silicide coatings is generally different from the undoped silicides. The growth of dual-layer Ti-boride coatings was also studied.
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