Abstract
In this paper, we report the growth and characterization of II–VI devices grown by molecular beam epitaxy (MBE). The n-type doped ZnSe epilayers were obtained using iodine fom an electrochemical cell and nitrogen from a RF plasma source was used for p-type doping. Capacitance-voltage ( C-V) electrochemical profiling of layers and devices has been used to ensure uniform n-type and p-type doping. The nitrogen doped epilayers show a compensation process which leads to the suggestion of a new deep donor which is a complex, such as the (V Se-Zn-N Se) single donor which involves native Se vacancies. The fabrication of pn laser diodes and ZnSe/Zn 0.82Cd 0.18Se quantum well (QW) laser diodes is reported. The pn junctions show blue laser emission between 448–473 nm under pulsed current conditions at 4.2 K and the QW laser diode shows an excellent mode structure and emits at 474.8 nm at 77 K in pulsed mode operation.
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