Abstract
With the development of wide-bandgap (WBG) semiconductors, the use of silicon carbide (SiC) and gallium nitride (GaN) power devices in both industrial, and automotive applications have significantly increased. To fully unleash the potential of WBG power devices for applications in harsh environments, it is required to develop packaging materials with high-temperature capability. In this paper, epoxy molding compound (EMC) with glass transition temperature (T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf> ) above 250°C was developed. Dicyclopentadiene (DCPD) and naphthalene epoxy resin were used as the matrix material, cured with an acid anhydride hardener for cross-linking reaction. Through dynamic thermomechanical analysis (DMA), thermomechanical analysis (TMA), and other testing methods, the glass transition temperature, storage modulus, coefficient of thermal expansion (CTE), and other properties of the prepared EMC were characterized. Testing results showed that the as-synthesized EMC was suitable for electronics packaging applications, which can maximize the high-temperature performance of WBG power devices.
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