Abstract
Thermal quenching is a severe problem for phosphors applied to white light emitting diode field. To solve this problem, a series of phosphors are designed in this work. Different trap levels are introduced in the BaSi2O5: Eu2+ phosphor via different trivalent rare earth ions. Then the thermal stabilities of these different phosphors are investigated to explore the role of shallow or deep trap levels and the corresponding schematic diagram is proposed. Our results could provide the basics for design phosphors with better thermal stability.
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