Developing of 2D helical waves in semiconductor under the action of femtosecond laser pulse and external electric field

Abstract

We analyze laser-induced periodic structure developing in a semiconductor under the condition of both optical bistability existence and action of 2D external electric field. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on charged particles concentration. The electron mobility, diffusion of electrons and laser-induced electric field are taken into account for laser pulse propagation analyzing. 2D external electric field together with electric field, induced by free electrons and ionized donors, governs the charged particle motion. Under certain conditions, the additional positive inverse loop between electron motion and electric field, caused by redistribution of free charged particles, appears. As a result, the helical wave for free charged particle concentration of electron-hole plasma in semiconductor develops under the electric field action. For computer simulation of a problem under consideration, a new finite-difference scheme is proposed. The main feature of proposed method consists in constructed two-step iteration process. We pay a special attention for calculation of initial functions distributions. For their calculation we solve the set of 2D stationary partial differential equations by using additional iteration process that is similar to the iteration process, applied for the main problem solution.