Abstract
Quantum dot light-emitting diodes (QLEDs) offer advantages including a wide color gamut, high color purity, high brightness, low turn-on voltage, and thin form for next-generation displays. This article used a unique metal oxide and polymer combination to develop a flexible QLED. CdSe/ZnS quantum dots are synthesized using the hot-injection method, which yielded successful results. To construct the QLED, PEDOT: PSS polymer is used as a hole transport layer, enabling holes to move more efficiently due to its chain structure. The electron transfer layer utilized ZnO, which has high conductivity. Incorporating PDINO as an interlayer between ZnO and QDs in the QLED design resulted in the balanced movement of electrons and holes, reducing the turn-on voltage and increasing the turn-on speed and efficiency. By using this combination, in addition to increasing the turn-on speed of the QLED, its turn-on voltage was reduced from 6 V to 2 V and the output current increased by 0.2 mA. The device is modeled using the finite element method and Scaps-1D software to study the interlayer effect of PDINO. The use of PDINO resulted in a decrease in non-radiative recombinations near the QDs and ETL interface, while slightly enhancing radiative recombination.
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