Abstract
The effect of developer temperature on the development rates and line edge profiles of electron beam and optically exposed diazo‐type photoresists were investigated. An in situ thickness measurement tool (FTA) was used to monitor the development rates; and activation energies based on a simple Arrhenius dependence were calculated. For the positive diazo‐resist system AZ‐1350J exposed to e‐beam, the activation energies and line edge profiles are temperature dependent. Both optically and e‐beam exposed resists give greater contrast, straighter line edge profiles, and linewidth control at low temperatures (10°–15°C). For AZ‐2400 exposed optically and with e‐beam, the activation energies and line edge profiles are independent of temperature, indicating that developer temperature is a less critical parameter for AZ‐2400 than for AZ‐1350J.
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