Developed performance of rGO/p-Si Schottky junction solar cells

Abstract

Graphene in combination with Si has been extensively used to prepare efficient and stable p-graphene/n-Si Schottky junction solar cells. In contrast, there is a difficulty in including graphene within the fabrication process of efficient and stable n-graphene/p-Si Schottky junction solar cells. The reason for this is that there is a challenge in achieving an effective and stable n-doping process for graphene or rGO due to the ambient environment. In this work, a novel approach is introduced for preparing more efficient, stable, larger and simpler n-rGO/p-Si Schottky junction solar cells. The n-rGO rather than graphene, which has been successfully developed using NH 3 molecules, is included in the fabrication process of n-rGO/p-Si Schottky junction solar cells. Accordingly, the power conversion efficiency of 9.7 was obtained for prepared devices after applying ammonia treatment for 3 h. For the first time, the developed n-rGO layers are also excellently employed to prepare large n-rGO/p-Si Schottky junction solar cells with ideal J-V curves. The improved efficiency of 12.6 % is reached for n-rGO/p-Si Schottky junction solar cells prepared with an active area of 0.6 cm 2 . To improve the stability, devices are coated with PMMA as an encapsulated layer, leading to an improvement in the stability for 2 months in the ambient air. Additionally, a recorded efficiency of 13.8 % is achieved. We attribute this development to the chemisorption of ammonia molecules on rGO, which effectively develops the performance of devices.