Abstract
Uranium and UO 2 have been implanted with deuterium ions in the energy range 30–85 keV. Subsequently, the near surface regions (100–9000 Å) of these samples were quantitatively profiled for deuterium and oxygen using the method of ion beam microanalysis. Mean ranges and widths of the implanted ions were measured and compared with theoretical predictions. Fully oxidized samples were compared with those having only thin oxide films on their surfaces. While the deuterium appeared to migrate during its implantation in uranium, little or no migration appeared either during or after implantation in UO 2. Further measurements suggest that thin surface oxide films strongly trap the deuterium migrating beneath the surface. It is suggested that the electronic energy loss of the ion beam lowers the effective activation energy for the formation of OD bonds near the target surface.
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