Abstract
Single crystal 6H-SiC wafers have been irradiated 60° off normal at 150, 190, 250 and 295 K using 1.1 MeV Al 2 2+ ions over fluences from 0.15 to 2.85 ions/nm 2. The accumulation and recovery of disorder on both the Si and C sublattices have been measured simultaneously using in situ 0.94 MeV D + Rutherford backscattering 28 Si(d,d) 28 Si and nuclear reaction 12 C(d,p) 13 C along the 〈0 0 0 1〉 -axial channeling direction. The behavior of disorder accumulation and recovery on the Si and C sublattices is similar. The data suggest that a dynamic recovery stage occurs between irradiation temperatures of 190 and 250 K. At intermediate doses, isochronal annealing (20 min) results show that significant thermal recovery occurs between 420 and 720 K. Complete recovery is not observed by thermal annealing up to the highest temperature (870 K) used in this study.
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