Abstract
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride films for nonlinear integrated photonics. With a peak processing temperature less than 300°C, it is back-end compatible with complementary metal-oxide semiconductor substrates. We achieve microresonators with a quality factor of up to 1.6×106 at 1552nm and >1.2×106 throughout λ=1510-1600 nm, without annealing or stress management (film thickness of 920nm). We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1THz free-spectral-range, 900nm bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.
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