Abstract
In this paper, we use a two-pulse C-V technique to study detrapping in Al2O3 metal-oxide-semiconductor at extremely short (and long) times. The investigated timescale spanned from hundreds of microseconds to ten minutes. The flat band voltage instability was studied systematically and a phenomenological model was written which accounts for logarithmic dependence on time, and linear dependence on the film thickness and the accelerating voltage. A main goal of the work is to demonstrate that this technique is a tool for the investigation of fast electrical transients in high-k films on timescale which are not accessible with conventional steady-state techniques.
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