Abstract

Use of nitrogen-vacancy (NV) centers in diamond for quantum applications requires fast switching between their two different charge states. Using a diamond diode, scientists now demonstrate for the first time deterministic, purely electrical, and room-temperature charge-state control of single NV centers on the time scale of a microsecond.

Highlights

  • State-of-the-art devices have sizes of a few tens of nanometers, owing to electrical control, which is superior to optical control, in which diffraction sets limits that are 1 order of magnitude larger

  • We demonstrate the electrical manipulation of individual prominent representatives of such atomic solid-state defects, namely, the negative charge state of single nitrogenvacancy defect centers (NV−) in diamond

  • We report the electrical control of a single NV− center by using a diamond diode for the first time

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Summary

Introduction

State-of-the-art devices have sizes of a few tens of nanometers, owing to electrical control, which is superior to optical control, in which diffraction sets limits that are 1 order of magnitude larger. The electrical control of single atomic units in, e.g., single P dopants in silicon (Si:P) [1,2] and quantum-dots in GaAs [3,4] is getting common practice nowadays. Owing to their single quantum nature, quantum systems have led to the development of novel fields such as quantum electronics, spintronics, and metrology. We demonstrate the deterministic and purely electrical charge-state control of single atomic defects in diamond at room temperature For this purpose, we use single nitrogen-vacancy (NV)

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