Abstract
A simple proximate method for determining the generation rate G s of electron-hole pairs in metal-ultrathin oxide-semiconductor (MOS) structures is proposed. This method is based on measurements of dynamic current-voltage characteristics of MOS structures in the region of deep depletion of the semiconductor surface and on the comparison of these data to a quasi-equilibrium volt-farad characteristic (VFC) of an ideal MOS structure. This approach to determining G s from the value of the structure capacitance is insensitive either to a shift of the VPC, which is caused by the presence of built-in charges, or a recharge of localized electron states in the oxide and at the Si-SiO2 interface. The proposed technique also allows one to take the influence of a tunneling current through an insulator on the measurement results into account. The algorithm was tested in studies of generation and annihilation processes of centers of generation of electron-hole pairs in n-Si-based MOS structures with an ultrathin (≅4 nm) oxide.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
